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Dual Bias Resistor Transistors featuring LRC LMUN5312DW1T1G in SOT363 package ideal for applications

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Dual Bias Resistor Transistors featuring LRC LMUN5312DW1T1G in SOT363 package ideal for applications

Output Voltage(VO(on)) : 200mV

Input Resistor : 22kΩ

Resistor Ratio : 1

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 50V 100mA 250mW Surface Mount SOT-363

Mfr. Part # : LMUN5312DW1T1G

Model Number : LMUN5312DW1T1G

Package : SOT-363

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Dual Bias Resistor Transistors: NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

The LMUN5311DW1T1G series features Dual Bias Resistor Transistors (BRTs) in a SOT-363/SC-88 package. Each BRT integrates a single transistor with a monolithic bias network, comprising a series base resistor and a base-emitter resistor. This design eliminates the need for external bias resistors, simplifying circuit design, reducing board space, and lowering component count. The series offers complementary NPN and PNP transistors, ideal for low-power surface mount applications where space is limited.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material Compliance: RoHS requirements and Halogen Free
  • Application Specific Prefix: S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.

Technical Specifications

Series/Model Package Device Marking R1 (k) R2 (k) Shipping
LMUN5311DW1T1G SOT-363 11 10 10 3000/Tape&Reel
LMUN5311DW1T3G SOT-363 11 10 10 10000/Tape&Reel
LMUN5312DW1T1G SOT-363 12 22 22 3000/Tape&Reel
LMUN5312DW1T3G SOT-363 12 22 22 10000/Tape&Reel
LMUN5313DW1T1G SOT-363 13 47 47 3000/Tape&Reel
LMUN5313DW1T3G SOT-363 13 47 47 10000/Tape&Reel
LMUN5314DW1T1G SOT-363 14 10 47 3000/Tape&Reel
LMUN5314DW1T3G SOT-363 14 10 47 10000/Tape&Reel
LMUN5315DW1T1G SOT-363 15 10 - 3000/Tape&Reel
LMUN5315DW1T3G SOT-363 15 10 - 10000/Tape&Reel
LMUN5316DW1T1G SOT-363 16 4.7 - 3000/Tape&Reel
LMUN5316DW1T3G SOT-363 16 4.7 - 10000/Tape&Reel
LMUN5330DW1T1G SOT-363 30 1 1 3000/Tape&Reel
LMUN5330DW1T3G SOT-363 30 1 1 10000/Tape&Reel
LMUN5331DW1T1G SOT-363 31 2.2 2.2 3000/Tape&Reel
LMUN5331DW1T3G SOT-363 31 2.2 2.2 10000/Tape&Reel
LMUN5332DW1T1G SOT-363 32 4.7 4.7 3000/Tape&Reel
LMUN5332DW1T3G SOT-363 32 4.7 4.7 10000/Tape&Reel
LMUN5333DW1T1G SOT-363 33 4.7 47 3000/Tape&Reel
LMUN5333DW1T3G SOT-363 33 4.7 47 10000/Tape&Reel
LMUN5334DW1T1G SOT-363 34 22 47 3000/Tape&Reel
LMUN5334DW1T3G SOT-363 34 22 47 10000/Tape&Reel
LMUN5335DW1T1G SOT-363 35 2.2 47 3000/Tape&Reel
LMUN5335DW1T3G SOT-363 35 2.2 47 10000/Tape&Reel
Characteristic Symbol Value Unit Notes
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC 100 mAdc
Total Device Dissipation (One Junction Heated) PD 187 mW TA= 25C, FR-4 @ Minimum Pad
Total Device Dissipation (Both Junctions Heated) PD 250 mW TA= 25C, FR-4 @ Minimum Pad
Junction-to-Ambient Thermal Resistance (One Junction Heated) RJA 670 C/W TA= 25C, FR-4 @ Minimum Pad
Junction-to-Ambient Thermal Resistance (Both Junctions Heated) RJA 493 C/W TA= 25C, FR-4 @ Minimum Pad
Junction and Storage Temperature TJ, Tstg -55 to +150 C
Collector-Base Breakdown Voltage V(BR)CBO 50 Vdc IC = 10 A, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 50 Vdc IC = 2.0 mA, IB = 0, Note 3
Model VCE = 10 V, IC = 5.0 mA
(hFE)		 IC = 10 mA, IB = 0.3 mA
(VCE(sat))		 IC = 10 mA, IB = 5 mA
(VCE(sat))		 IC = 10 mA, IB = 1 mA
(VCE(sat))		 VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k
(VOL)		 VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k
(VOH)		 VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k
(VOH)		 R1 R2 R1/R2 Ratio
Min Typ Max Min Typ Max Min Typ Max Min Typ Max Min Typ Max Min Typ Max Min Typ Max Min Typ Max Min Typ Max Min Typ Max Min Typ Max
LMUN5311DW1T1G 35 60 - - - 0.25 - - - - - - - - - 7.0 10 13 0.8 - -
LMUN5312DW1T1G 80 - - - - 0.25 - - - - - - - - - 15.4 22 28.6 0.8 - -
LMUN5313DW1T1G 80 - - - - 0.25 - - - - - - - - - 32.9 47 61.1 0.8 - -
LMUN5314DW1T1G 160 - - - - 0.25 - - - - - - - - - 7.0 10 13 0.17 - -
LMUN5315DW1T1G 160 - - - - 0.25 - - - - - - - - - 7.0 10 13 - 0.055 -
LMUN5316DW1T1G 350 - - - - 0.25 - - - - - - - - - 3.3 4.7 6.1 - 0.38 -
LMUN5330DW1T1G 5.0 - - - - 0.25 - - - - - - - - - 1.0 1 1.3 1.0 - -
LMUN5331DW1T1G 15 - - - - 0.25 - - - - - - - - - 2.2 2.2 2.9 1.0 - -
LMUN5332DW1T1G 80 - - - - 0.25 - - - - - - - - - 4.7 4.7 6.1 1.0 - -
LMUN5333DW1T1G 80 - - - - 0.25 - - - - - - - - - 4.7 47 6.1 0.1 - -
LMUN5334DW1T1G 80 - - - - 0.25 - - - - - - - - - 22 47 28.6 0.47 - -
LMUN5335DW1T1G 80 - - - - 0.25 - - - - - - - - - 2.2 47 2.86 0.047 - -
Characteristic Symbol Min Typ Max Unit Notes
Collector-Base Cutoff Current ICBO - - 100 nAdc VCB = 50 V, IE = 0
Collector-Emitter Cutoff Current ICEO - - 500 nAdc VCE = 50 V, IB = 0
Emitter-Base Cutoff Current IEBO - - 0.5 mAdc LMUN5311DW1T1G, VEB = 6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO - - 0.2 mAdc LMUN5312DW1T1G, VEB = 6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO - - 0.1 mAdc LMUN5313DW1T1G, VEB = 6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO - - 0.2 mAdc LMUN5314DW1T1G, VEB = 6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO - - 0.9 mAdc LMUN5315DW1T1G, VEB = 6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO - - 1.9 mAdc LMUN5316DW1T1G, VEB = 6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO - - 4.3 mAdc LMUN5330DW1T1G, VEB = 6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO - - 2.3 mAdc LMUN5331DW1T1G, VEB = 6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO - - 1.5 mAdc LMUN5332DW1T1G, VEB = 6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO - - 0.18 mAdc LMUN5333DW1T1G, VEB = 6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO - - 0.13 mAdc LMUN5334DW1T1G, VEB = 6.0 V, IC = 0
Emitter-Base Cutoff Current IEBO - - 0.2 mAdc LMUN5335DW1T1G, VEB = 6.0 V, IC = 0

2201121730_LRC-LMUN5312DW1T1G_C2936684.pdf


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